103 silicon npn triple diffused planar transistor (complement to type 2sa1673) application : audio and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 200 180 6 15 4 85(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob ratings 10 max 10 max 180 min 50 min * 2.0 max 20 typ 300 typ unit m a m a v v mhz pf conditions v cb =200v v eb =6v i c =50ma v ce =4v, i c =3a i c =5a, i b =0.5a v ce =12v, i e =?.5a v cb =10v, f=1mhz 2sc4388 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating safe operating area (single pulse) f t i e characteristics (typical) 0 3 2 1 0 0.5 1.0 2.0 1.5 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =10a 5a collector current i c (a) 0 15 10 5 02 1 base-emittor voltage v be (v) (v ce =4v) 125?c (case temp) 25?c (case temp) ?0?c (case temp) 0.1 1 3 0.5 1 10 100 1000 2000 time t(ms) transient thermal resistance q j-a (?c/w) 10 50 5 3 100 200 0.05 1 0.5 0.1 10 40 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling dc 100ms 10ms 0.02 0.1 1 10 0.5 5 15 20 50 100 300 collector current i c (a) dc current gain h fe (v ce =4v) typ 0 0 5 15 10 2 134 collector-emitter voltage v ce (v) collector current i c (a) 50ma i b =20ma (v ce =4v) 0.02 0.5 5 1 20 50 200 100 0.1 10 15 collector current i c (a) dc current gain h fe 125?c 25?c ?0?c ?.02 ?.1 ? ?0 0 10 20 30 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) typ 1a 700ma 500ma 300ma 200ma 100ma 100 80 60 40 20 3.5 0 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 0 25 50 75 100 125 150 external dimensions fm100(to3pf) 4.4 1.5 1.5 be c 5.45 ?.1 ?.3 ?.2 1.6 3.3 1.75 0.8 ?.2 2.15 1.05 +0.2 -0.1 5.45 ?.1 23.0 ?.3 16.2 9.5 ?.2 5.5 15.6 ?.2 5.5 ?.2 3.45 3.35 0.65 +0.2 -0.1 ?.2 3.0 0.8 a b weight : approx 6.5g a. part no. b. lot no. n typical switching characteristics (common emitter) v cc (v) 40 r l ( ) 4 i c (a) 10 v bb2 (v) ? i b2 (a) ? t on ( m s) 0.5 max t stg ( m s) 1.8 max t f ( m s) 0.6 max i b1 (a) 1 v bb1 (v) 10 * h fe rank o(50 to 100), p(70 to 140), y(90 to 180)
|
